Main challenges in microelectronics and future need in characterisation: the vision from LFoundry

The nano characteristics of materials used in CMOS electronics industry plays an important role for designing the devices performances and guaranteeing the expected functionality; among these silicon strain is one key feature since it modulates either the  mobility  performances and junction leakages. To characterize the Si strain on nano scaled design test structures and measure the expected strain values obtained in the production process, nano-Raman and electron diffraction techniques have been used. Similarly the  I-V characterization of single transistors or junctions in the live die has been explored with nano-probing technique.   

Onofrio Antonino CACIOPPO    R&D- Physical & FA Lab Senior Manager at LFoundry
Sergio D’ALBERTO    General Affairs Manager at LFoundry
Marco ROSSI    Professor of Physics at the Faculty of Engineering at La Sapienza University