Neutron and Synchrotron Nanoprobe Techniques for Microelectronics R&D

Start Date
11-09-2017 16:00
End Date
11-09-2017 17:00
Room 500 - 501, Central Building
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Anaïs Fernandes
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Microelectronics devices are continuously evolving in terms of materials, architecture, integration, fabrication processes, etc. This continuous evolution demands big research efforts, especially in terms of characterization. With the increasing complexity of electronic devices, and the need for new materials with higher performances and new properties, the advanced characterization provided by synchrotron and neutron installations starts to play an important role for microelectronics R&D.

In this talk, I will present some results obtained at the ESRF and ILL from the characterization of innovative materials and microelectronics devices. First, some examples of experiments performed on the former X-ray nanoprobe ID22 (new ID16B) to study intricate phenomena occurring in new types of nanomaterials will be presented. The diverse techniques available on this beamline and the possibility of using them simultaneously on the same sample provide unique information about the studied materials that cannot be obtained elsewhere. Afterwards, the efforts made at the ILL with the help of the IRT Nanoelec to open and adapt the neutron facility to the needs of the microelectronics R&D, and the first promising results obtained in direct collaboration with some microelectronic industries based in Grenoble will be presented. Finally, I offer some new ideas about subjects that can be investigated on the actual ID16B, as well as new opportunities for the microelectronics research on this nanoprobe that would profit from the upgrade of the ESRF source.

Visitors from off-site please contact Anaïs Fernandes tel +33 (0)438 88 19 92 to arrange for a gate pass.
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